Título
Luminescent Devices Based on Silicon-Rich Dielectric Materials
Autor
LILIANA PALACIOS HUERTA
MARIANO ACEVES MIJARES
LILIANA LICEA JIMENEZ
Nivel de Acceso
Acceso Abierto
Materias
Resumen o descripción
Luminescent silicon‐rich dielectric materials have been under intensive research due to
their potential applications in optoelectronic devices. Silicon‐rich nitride (SRN) and silicon‐
rich oxide (SRO) films have been mostly studied because of their high luminescence
and compatibility with the silicon-based technology. In this chapter, the luminescent
characteristics of SRN and SRO films deposited by low‐pressure chemical vapor deposition
are reviewed and discussed. SRN and SRO films, which exhibit the strongest photoluminescence
(PL), were chosen to analyze their electrical and electroluminescent (EL)
properties, including SRN/SRO bilayers. Light emitting capacitors (LECs) were fabricated
with the SRN, SRO, and SRN/SRO films as the dielectric layer. SRN‐LECs emit broad EL
spectra where the maximum emission peak blueshifts when the polarity is changed. On
the other hand, SRO‐LECs with low silicon content (~39 at.%) exhibit a resistive switching
(RS) behavior from a high conduction state to a low conduction state, which produce
a long spectrum blueshift (~227 nm) between the EL and PL emission. When the silicon
content increases, red emission is observed at both EL and PL spectra. The RS behavior
is also observed in all SRN/SRO‐LECs enhancing an intense ultraviolet EL. The carrier
transport in all LECs is analyzed to understand their EL mechanism.
Fecha de publicación
2016
Tipo de publicación
Capítulo de libro
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Formato
application/pdf
Idioma
Inglés
Repositorio Orígen
Fuente de Objetos Científicos Open Access
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