Título

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Autor

LILIANA PALACIOS HUERTA

MARIANO ACEVES MIJARES

LILIANA LICEA JIMENEZ

Nivel de Acceso

Acceso Abierto

Resumen o descripción

Luminescent silicon‐rich dielectric materials have been under intensive research due to

their potential applications in optoelectronic devices. Silicon‐rich nitride (SRN) and silicon‐

rich oxide (SRO) films have been mostly studied because of their high luminescence

and compatibility with the silicon-based technology. In this chapter, the luminescent

characteristics of SRN and SRO films deposited by low‐pressure chemical vapor deposition

are reviewed and discussed. SRN and SRO films, which exhibit the strongest photoluminescence

(PL), were chosen to analyze their electrical and electroluminescent (EL)

properties, including SRN/SRO bilayers. Light emitting capacitors (LECs) were fabricated

with the SRN, SRO, and SRN/SRO films as the dielectric layer. SRN‐LECs emit broad EL

spectra where the maximum emission peak blueshifts when the polarity is changed. On

the other hand, SRO‐LECs with low silicon content (~39 at.%) exhibit a resistive switching

(RS) behavior from a high conduction state to a low conduction state, which produce

a long spectrum blueshift (~227 nm) between the EL and PL emission. When the silicon

content increases, red emission is observed at both EL and PL spectra. The RS behavior

is also observed in all SRN/SRO‐LECs enhancing an intense ultraviolet EL. The carrier

transport in all LECs is analyzed to understand their EL mechanism.

Fecha de publicación

2016

Tipo de publicación

Capítulo de libro

Versión de la publicación

Versión enviada

Formato

application/pdf

Idioma

Inglés

Repositorio Orígen

Fuente de Objetos Científicos Open Access

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617

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