Título
Antireflective embedded MSM photodetector: An architectural optimization
Autor
GUILLERMO FERNANDO CAMACHO GONZALEZ
Colaborador
JOSE JAVIER SANCHEZ MONDRAGON (Asesor de tesis)
PONCIANO RODRIGUEZ MONTERO (Asesor de tesis)
Nivel de Acceso
Acceso Abierto
Materias
Resumen o descripción
Photodetectors are essential elements in optoelectronics because they are the
communication via between light and electronics. There are several kinds of photodetectors but
nowadays the most used are semiconductor photodetectors due to its versatility when detecting
light of specific wavelengths efficiently and with fast response velocity.
Most semiconductor photodetectors are fabricated with striped interdigitated electrodes
over a semiconductor substrate (MSM photodetectors), in order that we have periodicity between
metallic electrodes and semiconductor regions on top photodetector surface. These kind of
photodetectors are widely used in communications due to its faster response compared to other
photodetector structures1’2’3 and they are a very good for UV detection4’5. Light is detected when it
reaches the semiconductor region by creating charge carriers (holes and electrons) that are then
transported to the electrodes due to an applied voltage difference6. Interdigitated electrodes are
used to increase the active region area (semiconductor) while optimizing the electric fields between
electrodes for carrier collection meaning high velocity response and sensitivity, but unfortunately it
also provokes that certain amount of light get back reflected by the electrodes surfaces. Many
methods to compensate this loss have been proposed, some examples are: using metallic gratings
Editor
Instituto Nacional de Astrofísica, Óptica y Electrónica
Fecha de publicación
mayo de 2015
Tipo de publicación
Tesis de maestría
Recurso de información
Formato
application/pdf
Idioma
Inglés
Audiencia
Público en general
Sugerencia de citación
Camacho-Gonzalez G.F.
Repositorio Orígen
Repositorio Institucional del INAOE
Descargas
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