Título

Charge trapping and de-trapping in Si-nanoparticles embedded in silicon oxide films

Autor

MARIANO ACEVES MIJARES

Nivel de Acceso

Acceso Abierto

Licencia

http://creativecommons.org/licenses/by-nc-nd/4.0

Materias

CIENCIAS FÍSICO MATEMÁTICAS Y CIENCIAS DE LA TIERRA - (CTI) FÍSICA - (CTI) ELECTRÓNICA - (CTI)

Resumen o descripción

Electrical properties of silicon nanoparticles (Si-np’s) embedded in a silicon oxide matrix were studied using MOS-like structures. Si-np’s were created after silicon rich oxide (SRO) films were thermally annealed at 1100 ºC. Capacitance– voltage (C–V) characteristics showed downward and upward peaks in the accumulation region. Current–voltage (I–V) measurements exhibited current valleys and downward and upward peaks. Current versus time (I–t) measurements were also done at a negative constant gate voltage. A switching behaviour between two current states (ON and OFF) was observed. These effects have been related to the charge trapping and de-trapping of the Si-np’s embedded in the SRO films.

Editor

WILEY-VCH Verlag GmbH

&

Co. KGaA, Weinheim

Fecha de publicación

2008

Tipo de publicación

Artículo

Versión de la publicación

Versión aceptada

Recurso de información

http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1054

Formato

application/pdf

Idioma

Inglés

Audiencia

Estudiantes

Investigadores

Público en general

Sugerencia de citación

Morales-Sánchez, A., et al., (2008). Charge trapping and de-trapping in Si-nanoparticles embedded in silicon oxide films, Physica Status Solidi 5, (12): 3651–3654

Repositorio Orígen

Repositorio Institucional del INAOE

Descargas

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