Título
Pulse characteristics of silicon double barrier optical sensors with signal amplification
Autor
OLEKSANDR MALIK
FRANCISCO JAVIER DE LA HIDALGA WADE
CARLOS ZUÑIGA ISLAS
Nivel de Acceso
Acceso Abierto
Materias
Resumen o descripción
The pulse characteristics of optical sensors with double potential barriers formed on the opposite sides of a high-resistivity (v) silicon substrate have been studied. The first barrier is formed by multiple micro-sized Ti–vSi contact barriers surrounded by Ti–SiO2–vSi MOS structures. The second one is the v–n+ potential barrier formed at the bottom of the wafer. The structure presents signal amplification for both polarities of the applied voltage. Under negative bias applied to the semi-transparent Ti-electrode, the reason of the current gain is the change in the transport mechanism of carriers through the potential barrier of the Schottky barrier along its perimeter, which is due to the strong electric field originated by the photogenerated minority carriers forming an inversion layer at the silicon-oxide interface. Under positive bias, the current gain is due to the operation of the v–n+ potential barrier, which was studied earlier, and in this work it is used for comparison purposes.
Editor
Elsevier B.V.
Fecha de publicación
2008
Tipo de publicación
Artículo
Versión de la publicación
Versión aceptada
Recurso de información
Formato
application/pdf
Idioma
Inglés
Audiencia
Estudiantes
Investigadores
Público en general
Sugerencia de citación
Malik, O., et al., (2008). Pulse characteristics of silicon double barrier optical sensors with signal amplification, Sensors and Actuators A (142): 118–123
Repositorio Orígen
Repositorio Institucional del INAOE
Descargas
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