Título
Degradation and Breakdown of W–La2O3 Stack after Annealing in N2
Autor
JOEL MOLINA REYES
ALFONSO TORRES JACOME
WILFRIDO CALLEJA ARRIAGA
Nivel de Acceso
Acceso Abierto
Materias
Resumen o descripción
We report the effect of relatively high-voltage stressing (under substrate injection) on the stress-induced leakage current (SILC) and breakdown of W–La2O3 stacked structures. It is shown that the gate area of the metal–insulator–semiconductor (MIS) devices under evaluation influences their final degradation characteristics after stress. Once the samples reach breakdown, their post-breakdown current–voltage (I–V) characteristics suggest that leakage spots are highly localized and are caused by the accumulation of defects.
Editor
The Japan Society of Applied Physics
Fecha de publicación
2008
Tipo de publicación
Artículo
Versión de la publicación
Versión aceptada
Recurso de información
Formato
application/pdf
Idioma
Inglés
Audiencia
Estudiantes
Investigadores
Público en general
Sugerencia de citación
Molina-Reyes, J. , et al., (2008). Degradation and Breakdown of W–La2O3 Stack after Annealing in N2, Japanese Journal of Applied Physics, Vol. 47 (9): 7076–7080
Repositorio Orígen
Repositorio Institucional del INAOE
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