Título
Fabrication and characterization of coplanar waveguides on silicon using a combination of SiO2 and SRO20
Autor
REBECA LEAL ROMERO
IGNACIO ENRIQUE ZALDIVAR HUERTA
MARIA DEL CARMEN MAYA SANCHEZ
MARIANO ACEVES MIJARES
J. APOLINAR REYNOSO HERNANDEZ
Nivel de Acceso
Acceso Abierto
Materias
Attenuation constant - (ATTENUATION CONSTANT) Coplanar waveguide (CPW) - (COPLANAR WAVEGUIDE (CPW)) Dielectric constant - (DIELECTRIC CONSTANT) Silicon rich oxide (SRO) - (SILICON RICH OXIDE (SRO)) Traveling wave - (TRAVELING WAVE) CIENCIAS FÍSICO MATEMÁTICAS Y CIENCIAS DE LA TIERRA - (CTI) FÍSICA - (CTI) ELECTRÓNICA - (CTI)
Resumen o descripción
In this work, the use of silicon rich oxide (SRO) and chemical vapor deposition SiO2 double layers as passivation films of coplanar waveguides (CPW) on high resistivity silicon (HR-Si) with an N+ backside is studied. The microwave performance of the fabricated CPWs is evaluated by computing the attenuation loss of the devices in the 0.045–50 GHz frequency range. Experimental results show that the N+ layer can be used without affecting CPW performance. Also, using a combined dielectric layer (SRO20/SiO2), the attenuation losses are reduced compared to single dielectric layers.
Editor
IEEE
Fecha de publicación
2008
Tipo de publicación
Artículo
Versión de la publicación
Versión aceptada
Recurso de información
Formato
application/pdf
Idioma
Inglés
Audiencia
Estudiantes
Investigadores
Público en general
Sugerencia de citación
Leal-Romero, R., et al., (2008). Fabrication and characterization of coplanar waveguides on silicon using a combination of SiO2 and SRO20, IEEE Transactions on components and packaging technologies, Vol. 31 (3): 678-682
Repositorio Orígen
Repositorio Institucional del INAOE
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