Título

Structural characteristics of a multilayer of silicon rich oxide (SRO) with high Si content prepared by LPCVD

Autor

ZHENRUI YU

MARIANO ACEVES MIJARES

Nivel de Acceso

Acceso Abierto

Licencia

http://creativecommons.org/licenses/by-nc-nd/4.0

Materias

CIENCIAS FÍSICO MATEMÁTICAS Y CIENCIAS DE LA TIERRA - (CTI) FÍSICA - (CTI) ELECTRÓNICA - (CTI)

Resumen o descripción

Single layer films and a multilayer structure of SRO (Silicon Rich Oxide) have been prepared by LPCVD (Low Pressure Chemical Vapour Deposition) and characterized by FTIR, SIMS, XPS, TEM and AFM measurements. The stacked structure is composed of alternating layers of SRO with high Si content and SRO with low Si content. The layered structure is confirmed by SIMS and TEM measurements. The composition of the materials is discussed. Besides Si nanocrystals, the existence of agglomerates of silicon oxide with structure close to fused silica and the existence of oxynitrides is evidenced in the films with high Si content.

Editor

WILEY-VCH Verlag GmbH

&

Co. KGaA, Weinheim

Fecha de publicación

2009

Tipo de publicación

Artículo

Versión de la publicación

Versión aceptada

Recurso de información

http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1222

Formato

application/pdf

Idioma

Inglés

Audiencia

Estudiantes

Investigadores

Público en general

Sugerencia de citación

Quiroga, E., et al., (2009). Structural characteristics of a multilayer of silicon rich oxide (SRO) with high Si content prepared by LPCVD, Physica Status Solidi, A 206 (2): 263–269

Repositorio Orígen

Repositorio Institucional del INAOE

Descargas

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