Título

Reliability characteristics of W-La2O3 structures compared with those of HfO2-based gate oxides

Autor

JOEL MOLINA REYES

FRANCISCO JAVIER DE LA HIDALGA WADE

PEDRO ROSALES QUINTERO

Nivel de Acceso

Acceso Abierto

Licencia

http://creativecommons.org/licenses/by-nc-nd/4.0

Materias

CIENCIAS FÍSICO MATEMÁTICAS Y CIENCIAS DE LA TIERRA - (CTI) FÍSICA - (CTI) ELECTRÓNICA - (CTI)

Resumen o descripción

In this paper, we report and compare the reliability results obtained for W-La 2 O 3 gated Metal-Oxide-Semiconductor (MOS) devices with those of HfO 2-based systems reported in literature. Reliability issues like stress-induced leakage current (SILC), interface-states generation (Dit), threshold voltage shift (ΔVth) and time to breakdown (t bd) were compared and analyzed for both dielectrics in order to obtain a more specific assessment of their resistance to electrical degradation and breakdown.

Editor

IEEE

Fecha de publicación

2008

Tipo de publicación

Artículo

Versión de la publicación

Versión aceptada

Recurso de información

http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1267

Formato

application/pdf

Idioma

Inglés

Audiencia

Estudiantes

Investigadores

Público en general

Sugerencia de citación

J. Molina, et al., (2008). Reliability characteristics of W-La2O3 structures compared with those of HfO2-based gate oxides, IEEE (978-1-4244-2540-2/08): 1-4

Repositorio Orígen

Repositorio Institucional del INAOE

Descargas

303