Título
FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios
Autor
ABDU ORDUÑA DIAZ
CARLOS GERARDO TREVIÑO PALACIOS
ALFONSO TORRES JACOME
Nivel de Acceso
Acceso Abierto
Materias
Resumen o descripción
Hydrogenated amorphous silicon (a-Si:H) has found applications in flat panel displays, photovoltaic solar cell and recently has been employed in boron doped microbolometer array.Wehave performed electrical and structural characterizations of a-Si:H layers prepared by plasma enhanced chemical vapor deposition (PECVD) method at 540K on glass substrates at different diborane (B₂H₆) flow ratios (500, 250, 150 and 50 sccm). Fourier transform infrared spectroscopy (FTIR) measurements obtained by specular reflectance sampling mode, show Si–Si, B–O, Si–H, and Si–O vibrational modes (611, 1300, 2100 and 1100cm⁻¹ respectively) with different strengths which are associated to hydrogen and boron content. The current–voltage curves show that at 250 sccm flow of boron the material shows the lowest resistivity, but for the 150 sccm boron flow it is obtained the highest temperature coefficient of resistance (TCR).
Editor
Materials Science and Engineering B
Fecha de publicación
2010
Tipo de publicación
Artículo
Versión de la publicación
Versión aceptada
Recurso de información
Formato
application/pdf
Idioma
Inglés
Audiencia
Estudiantes
Investigadores
Público en general
Sugerencia de citación
Orduña Diaz, A., et al., (2010). FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios, Materials Science and Engineering B. Vol. 174(1):93–96
Repositorio Orígen
Repositorio Institucional del INAOE
Descargas
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