Título

Transmission line characterization on silicon considering arbitrary distribution of the series and shunt pad parasitics

Autor

REYDEZEL TORRES TORRES

RAFAEL VENEGAS FERRER

Nivel de Acceso

Acceso Abierto

Licencia

http://creativecommons.org/licenses/by-nc-nd/4.0

Materias

Interconnect - (INTERCONNECT) De-embedding - (DE-EMBEDDING) Transmission lines - (TRANSMISSION LINES) Microwave measurements - (MICROWAVE MEASUREMENTS) CIENCIAS FÍSICO MATEMÁTICAS Y CIENCIAS DE LA TIERRA - (CTI) FÍSICA - (CTI) ELECTRÓNICA - (CTI) ELECTRÓNICA - (CTI)

Resumen o descripción

This paper presents an analytical method to simultaneously determine the complex characteristic impedance and the pad parasitics of transmission lines fabricated on silicon. The method uses experimental two-port network parameters of two lines differing in length without the need of a reflect standard such as that required in TRL-like formulations. Furthermore, the losses associated with the silicon substrate are accurately considered using the experimentally determined complex propagation constant of the lines and three different configurations for the pad parasitics can be assumed. When using the extracted parameters in a model to represent transmission lines, excellent agreement between simulated and experimental data was achieved up to 50 GHz even for lines with lengths different to those used in the determination process.

Editor

Elsevier Ltd.

Fecha de publicación

2010

Tipo de publicación

Artículo

Versión de la publicación

Versión aceptada

Recurso de información

http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1531

Formato

application/pdf

Idioma

Inglés

Audiencia

Estudiantes

Investigadores

Público en general

Sugerencia de citación

Torres-Torres, R., et al., (2010). Transmission line characterization on silicon considering arbitrary distribution of the series and shunt pad parasitics, Solid-State Electronics, (54): 235–242

Repositorio Orígen

Repositorio Institucional del INAOE

Descargas

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