Título

On the photoluminescence of multilayer arrays of silicon rich oxide with high silicon content prepared by low pressure chemical vapor deposition

Autor

ENRIQUE QUIROGA GONZALEZ

MARIANO ACEVES MIJARES

ZHENRUI YU

ROSA ELVIA LOPEZ ESTOPIER

KARIM MONFIL LEYVA

Nivel de Acceso

Acceso Abierto

Resumen o descripción

The photoluminescence emission of multilayer structures composed of layers of silicon rich oxide with high silicon content and layers of silicon rich oxide with low silicon content obtained by low pressure chemical vapor deposition is here presented. Different parameters for the preparation of the multilayers have been varied such as the Si concentration and the thicknesses of the layers. Additionally, the samples were oxidized at different temperatures. For all samples the photoluminescence seems to have the same origin: defects in the oxide matrix and defects at the interfaces between the Si nanocrystals. The structural and compositional properties of the multilayer structures are discussed.

Editor

Elsevier B.V.

Fecha de publicación

2011

Tipo de publicación

Artículo

Versión de la publicación

Versión aceptada

Formato

application/pdf

Idioma

Inglés

Audiencia

Estudiantes

Investigadores

Público en general

Sugerencia de citación

Quiroga-González, E., et al., (2011). On the photoluminescence of multilayer arrays of silicon rich oxide with high silicon content prepared by low pressure chemical vapor deposition, Thin Solid Films, (519): 8030–8036

Repositorio Orígen

Repositorio Institucional del INAOE

Descargas

380

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