Título
On the photoluminescence of multilayer arrays of silicon rich oxide with high silicon content prepared by low pressure chemical vapor deposition
Autor
ENRIQUE QUIROGA GONZALEZ
MARIANO ACEVES MIJARES
ZHENRUI YU
ROSA ELVIA LOPEZ ESTOPIER
KARIM MONFIL LEYVA
Nivel de Acceso
Acceso Abierto
Materias
Multilayers - (MULTILAYERS) Silicon rich oxide - (SILICON RICH OXIDE) Nanoparticles - (NANOPARTICLES) Photoluminescence - (PHOTOLUMINESCENCE) Low-pressure chemical vapor deposition - (LOW-PRESSURE CHEMICAL VAPOR DEPOSITION) Transmission electron microscopy - (TRANSMISSION ELECTRON MICROSCOPY) CIENCIAS FÍSICO MATEMÁTICAS Y CIENCIAS DE LA TIERRA - (CTI) FÍSICA - (CTI) ELECTRÓNICA - (CTI) ELECTRÓNICA - (CTI)
Resumen o descripción
The photoluminescence emission of multilayer structures composed of layers of silicon rich oxide with high silicon content and layers of silicon rich oxide with low silicon content obtained by low pressure chemical vapor deposition is here presented. Different parameters for the preparation of the multilayers have been varied such as the Si concentration and the thicknesses of the layers. Additionally, the samples were oxidized at different temperatures. For all samples the photoluminescence seems to have the same origin: defects in the oxide matrix and defects at the interfaces between the Si nanocrystals. The structural and compositional properties of the multilayer structures are discussed.
Editor
Elsevier B.V.
Fecha de publicación
2011
Tipo de publicación
Artículo
Versión de la publicación
Versión aceptada
Recurso de información
Formato
application/pdf
Idioma
Inglés
Audiencia
Estudiantes
Investigadores
Público en general
Sugerencia de citación
Quiroga-González, E., et al., (2011). On the photoluminescence of multilayer arrays of silicon rich oxide with high silicon content prepared by low pressure chemical vapor deposition, Thin Solid Films, (519): 8030–8036
Repositorio Orígen
Repositorio Institucional del INAOE
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