Título
Optimization of the contact resistance in the interface structure of n-type Al/a-SiC:H by thermal annealing for optoelectronics applications
Autor
ROBERTO AMBROSIO
ALFONSO TORRES JACOME
CARLOS ZUÑIGA ISLAS
MARIO MORENO MORENO
JOSE MIRELES JR. GARCIA
Nivel de Acceso
Acceso Abierto
Materias
Annealing - (ANNEALING) Contact resistance - (CONTACT RESISTANCE) Electrical properties - (ELECTRICAL PROPERTIES) Interface formation - (INTERFACE FORMATION) LEDs - (LEDS) PECVD - (PECVD) SiC - (SIC) Structure - (STRUCTURE) CIENCIAS FÍSICO MATEMÁTICAS Y CIENCIAS DE LA TIERRA - (CTI) FÍSICA - (CTI) ELECTRÓNICA - (CTI) ELECTRÓNICA - (CTI)
Resumen o descripción
The presented work meets the requirements for integration of amorphous silicon carbon films with silicon technology in order to obtain a complete optoelectronic system such as light emitting diodes and its electronic readout circuits. The key enabler for this integration scheme is the low temperature of deposition of a‐SiC:H films and an ohmic behavior in the interface metal/a‐SiC:H. In this work, the optimization of the interface Al/a‐SiC:H films are performed by means of thermal annealing timing. The a‐SiC:H films were deposited by enhanced chemical vapor deposition from CH4/SiH4 and C2H2/SiH4 mixtures. The structural and optical properties of the deposited films are presented. An implantation phosphorous dose was used for doping before fabrication of patterned aluminum contacts. The implanted films were electrically characterized by the transfer length method (TLM) measuring a sheet resistance value as low as 171 MΩ/square. The Schottky behavior was improved to ohmic behavior after several hours in thermal annealing treatments at 350 °C, which allows to obtain a reasonable contact resistance values in the range from 8.6 to 26.8 kΩ.
Editor
WILEY-VCH Verlag GmbH
&
Co. KGaA, Weinheim
Fecha de publicación
2010
Tipo de publicación
Artículo
Versión de la publicación
Versión aceptada
Recurso de información
Formato
application/pdf
Idioma
Inglés
Audiencia
Estudiantes
Investigadores
Público en general
Sugerencia de citación
Roberto Ambrosio, et al., (2010). Optimization of the contact resistance in the interface structure of n-type Al/a-SiC:H by thermal annealing for optoelectronics applications, PPS Applications and Materials Science A 207, (7): 1708-1712
Repositorio Orígen
Repositorio Institucional del INAOE
Descargas
285