Título

Effect of drift and diffusion processes in the change of the current direction in a fet transistor

Autor

OSCAR VICENTE HUERTA GONZALEZ

Colaborador

EDMUNDO ANTONIO GUTIERREZ DOMINGUEZ (Asesor de tesis)

Nivel de Acceso

Acceso Abierto

Resumen o descripción

Typically, when the inversion channel has formed in a nMOSFET and

the drain voltage is swept, the channel current is positive, meaning a sourceto-

drain electron flow. This can be observed in transistors with channel

lengths not longer than 80 nm.

A set of experimental results showing a reversible channel current effect in a

34 nm nMOSFET is introduced. This effect means that the electrons suffer a

change in the direction, now flowing from drain-to-source. By numerical

modeling it was found that the reversible channel current effect is understood

by incorporating the Density Gradient (DG) theory, which is considered an

enhanced drift-diffusion model. The enhancement comes from considering

quantum nature effects that are negligible when working on the micrometer

scale (transistors with channel lengths longer than 80 nm).

The phenomenon is explained by a change of sign in the gradient of the

generalized quantum potential along the channel. The effect is only

observable at low drain voltages, where a slight initial internal channel

conductance (at no bias) unbalance causes the channel current to reverse

when the gate voltage sweeps from low to high values.

Editor

Instituto Nacional de Astrofísica, Óptica y Electrónica

Fecha de publicación

febrero de 2014

Tipo de publicación

Tesis de maestría

Versión de la publicación

Versión aceptada

Formato

application/pdf

Idioma

Inglés

Audiencia

Estudiantes

Investigadores

Público en general

Sugerencia de citación

Huerta-Gonzalez O.V.

Repositorio Orígen

Repositorio Institucional del INAOE

Descargas

3685

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