Título

Comparative study between silicon-rich oxide films obtained by LPCVD and PECVD

Autor

MARIANO ACEVES MIJARES

Nivel de Acceso

Acceso Abierto

Licencia

http://creativecommons.org/licenses/by-nc-nd/4.0

Materias

Silicon rich oxide - (SILICON RICH OXIDE) Infrared spectroscopy - (INFRARED SPECTROSCOPY) XPS - (XPS) Photoluminescence - (PHOTOLUMINESCENCE) CIENCIAS FÍSICO MATEMÁTICAS Y CIENCIAS DE LA TIERRA - (CTI) FÍSICA - (CTI) ELECTRÓNICA - (CTI)

Resumen o descripción

A comparative study of compositional and optical properties of silicon-rich oxide (SRO) films deposited by low-pressure chemical

vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) is presented. Infrared spectra revealed the

presence of hydrogen bonded to silicon atoms in the SRO–PECVD films, whereas in SRO–LPCVD films the IR spectra looked like the

stoichiometric thermal silicon oxide. Moreover, X-ray photoelectron spectroscopy (XPS) studies showed that the SRO–PECVD films

contain a higher content of nitrogen than SRO–LPCVD films. In spite of differences, the SRO films obtained by both methods show a

strong room-temperature photoluminescence (PL). However, the highest PL intensity was emitted by SRO films obtained by LPCVD.

Editor

Elsevier B.V.

Science Direct

Fecha de publicación

2007

Tipo de publicación

Artículo

Versión de la publicación

Versión aceptada

Recurso de información

http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/971

Formato

application/pdf

Idioma

Inglés

Audiencia

Estudiantes

Investigadores

Público en general

Sugerencia de citación

Morales, A., et al., (2007). Comparative study between silicon-rich oxide films obtained by LPCVD and PECVD, Physica E (38): 54–58

Repositorio Orígen

Repositorio Institucional del INAOE

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