Título
Room temperature ferromagnetism and ferroelectricity in strained multiferroic BiFeO3 thin films on La0.7Sr0.3MnO3/SiO2/Si substrates
Autor
MAYRA CECILIA RAMIREZ CAMACHO
CESAR FIDEL SANCHEZ VALDES
JOSE JUAN GERVACIO ARCINIEGA
Mario A. Curiel
JOSE LUIS SANCHEZ LLAMAZARES
OSCAR RAYMOND HERRERA
Nivel de Acceso
En Embargo
Identificador alterno
doi: https://doi.org/10.1016/j.actamat.2017.02.030
Materias
Resumen o descripción
"A novel ferromagnetic state coexisting with ferroelectric ordering at room temperature in strained BiFeO3 (BFO) thin films grown using a sputtering technique on La0.7Sr0.3MnO3/SiO2/Si(100) (LSMO/SOS) substrates is reported. The properties of BFO films with different thicknesses (tBFO = 15, 50, 70, 120, and 140 nm) on 40 nm LSMO layers are explored. [012] out-of-plane highly textured BFO/LSMO stacks grew with rhombohedral structures. LSMO layers are nanostructured in nature, constituted by ferromagnetic single-domain nanoregions induced by the constrain of the SiO2 surface, with TC ∼200 K and high coercive field (HC) of ∼1100 Oe at 2.5 K. BFO films grew epitaxially nanostructured on LSMO, exhibiting ∼4 nm spherical nanoregions. The BFO layers show typical antiferromagnetic behavior (in a greater volume fraction) when made thicker (tBFO > 70 nm). The thinner films (tBFO < 50 nm) display ferromagnetic behavior with TC > 400 K, HC ∼ 1600 Oe for 15 nm and ∼1830 Oe for 50 nm. We propose that such ferromagnetic behavior is originated by the establishment of a new magnetic configuration in the Fe3+OFe3+ sublattice of the BFO structure, induced by strong hybridization at the interface as consequence of superexchange coupling interactions with the ferromagnetic Mn3+OMn3+/Mn4+ sublattice of LSMO. All BFO layers show excellent ferroelectric and piezoelectric properties (coercive field ∼ 740 kV/cm, and d33 = 23 p.m./V for 50 nm; ∼200 kV/cm and 55 p.m./V for 140 nm), exhibiting 180° and 109° DWs structures depending on the thickness. Such multiferroic properties predict the potential realization of new magneto-electronic devices integrated with Si technology."
Editor
Elsevier B.V.
Fecha de publicación
abril de 2017
Tipo de publicación
Artículo
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application/pdf
Sugerencia de citación
M.C. Ramírez-Camacho, C.F. Sánchez-Valdés, J.J. Gervacio-Arciniega, R. Font, C. Ostos, D. Bueno-Baques, M. Curiel, J.L. Sánchez-Llamazares, J.M. Siqueiros, O. Raymond-Herrera, Room temperature ferromagnetism and ferroelectricity in strained multiferroic BiFeO3 thin films on La0.7Sr0.3MnO3/SiO2/Si substrates, Acta Materialia, Volume 128, 2017, Pages 451-464.
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