Título
Electron transport in AlxGa1 xAs d-MIGFETs: Conductivity enhancement induced by magnetic field effects
Autor
ISAAC RODRIGUEZ VARGAS
Nivel de Acceso
Acceso Abierto
Materias
Resumen o descripción
The electronic structure and the transport phenomena of d-MIGFETs have been studied in
an AlxGa1 xAs host matrix. The subband structure and mobility calculations were performed
within the effective mass approximation and relative mobility formula, respectively.
Both the electronic structure and the transport properties are calculated as
dependent on the applied magnetic field (B), the aluminum molar fraction (x) and the
contact voltage in one of the gates (VC1). It was found that the mobility and conductivity
are enhanced by increasing the magnetic field for appropriate aluminum molar fraction
and contact voltage. In particular, the mobility (conductivity) is improved almost 26% (32%)
for VC1 ¼ 900 meV (850 meV), x ¼ 0.2, and B ¼ 20 T.
Producción Científica de la Universidad Autónoma de Zacatecas UAZ
Fecha de publicación
21 de octubre de 2016
Tipo de publicación
Artículo
Recurso de información
http://hdl.handle.net/20.500.11845/666
0749-6036
Formato
application/pdf
Idioma
Inglés
Audiencia
Público en general
Repositorio Orígen
Repositorio Institucional Caxcán
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