Título

Electron transport in AlxGa1 xAs d-MIGFETs: Conductivity enhancement induced by magnetic field effects

Autor

ISAAC RODRIGUEZ VARGAS

Nivel de Acceso

Acceso Abierto

Resumen o descripción

The electronic structure and the transport phenomena of d-MIGFETs have been studied in

an AlxGa1 xAs host matrix. The subband structure and mobility calculations were performed

within the effective mass approximation and relative mobility formula, respectively.

Both the electronic structure and the transport properties are calculated as

dependent on the applied magnetic field (B), the aluminum molar fraction (x) and the

contact voltage in one of the gates (VC1). It was found that the mobility and conductivity

are enhanced by increasing the magnetic field for appropriate aluminum molar fraction

and contact voltage. In particular, the mobility (conductivity) is improved almost 26% (32%)

for VC1 ¼ 900 meV (850 meV), x ¼ 0.2, and B ¼ 20 T.

Producción Científica de la Universidad Autónoma de Zacatecas UAZ

Fecha de publicación

21 de octubre de 2016

Tipo de publicación

Artículo

Recurso de información

Formato

application/pdf

Idioma

Inglés

Audiencia

Público en general

Repositorio Orígen

Repositorio Institucional Caxcán

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