Título
Angle-dependent bandgap engineering in gated graphene superlattices
Autor
ISAAC RODRIGUEZ VARGAS
Nivel de Acceso
Acceso Abierto
Materias
Resumen o descripción
Graphene Superlattices (GSs) have attracted a lot of attention due to its peculiar
properties as well as its possible technological implications. Among these characteristics
we can mention: the extra Dirac points in the dispersion relation and the
highly anisotropic propagation of the charge carriers. However, despite the intense
research that is carried out in GSs, so far there is no report about the angular
dependence of the Transmission Gap (TG) in GSs. Here, we report the dependence
of TG as a function of the angle of the incident Dirac electrons in a rather
simple Electrostatic GS (EGS). Our results show that the angular dependence of
the TG is intricate, since for moderated angles the dependence is parabolic, while
for large angles an exponential dependence is registered. We also find that the
TG can be modulated from meV to eV, by changing the structural parameters of
the GS. These characteristics open the possibility for an angle-dependent bandgap
engineering in graphene
Producción Científica de la Universidad Autónoma de Zacatecas UAZ
Fecha de publicación
marzo de 2016
Tipo de publicación
Artículo
Recurso de información
Formato
application/pdf
Idioma
Inglés
Audiencia
Público en general
Repositorio Orígen
Repositorio Institucional Caxcán
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