T铆tulo
Fowler-Nordheim tunneling characterization on Poly1-Poly2 capacitors for the implementation of analog memories in CMOS 0.5 饾渿
m technology
Autor
ENRIQUE JOSE TINAJERO PEREZ
Jes煤s Ezequiel Molinar Solis
RODOLFO ZOLA GARCIA LOZANO
Pedro Rosales Quintero
JOSE MIGUEL ROCHA PEREZ
ALEJANDRO DIAZ SANCHEZ
JOSE ARTURO MORALES ACEVEDO
Nivel de Acceso
Acceso Abierto
Resumen o descripci贸n
The experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 饾渿m technology are presented. This characterization allows the development, design, and characterization of a newcurrent-mode analog nonvolatile memory. Experimental results of the memory cell architecture are presented and demonstrate the usefulness of the proposed architecture.
Editor
Hindawi Publishing Corporation
Fecha de publicaci贸n
23 de febrero de 2014
Tipo de publicaci贸n
Art铆culo
Recurso de informaci贸n
Fuente
1687-8124
Idioma
Espa帽ol
Audiencia
Estudiantes
Investigadores
Repositorio Or铆gen
REPOSITORIO INSTITUCIONAL DE LA UAEM
Descargas
145