T铆tulo

Fowler-Nordheim tunneling characterization on Poly1-Poly2 capacitors for the implementation of analog memories in CMOS 0.5 饾渿

m technology

Autor

ENRIQUE JOSE TINAJERO PEREZ

Jes煤s Ezequiel Molinar Solis

RODOLFO ZOLA GARCIA LOZANO

Pedro Rosales Quintero

JOSE MIGUEL ROCHA PEREZ

ALEJANDRO DIAZ SANCHEZ

JOSE ARTURO MORALES ACEVEDO

Nivel de Acceso

Acceso Abierto

Resumen o descripci贸n

The experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 饾渿m technology are presented. This characterization allows the development, design, and characterization of a newcurrent-mode analog nonvolatile memory. Experimental results of the memory cell architecture are presented and demonstrate the usefulness of the proposed architecture.

Editor

Hindawi Publishing Corporation

Fecha de publicaci贸n

23 de febrero de 2014

Tipo de publicaci贸n

Art铆culo

Recurso de informaci贸n

Fuente

1687-8124

Idioma

Espa帽ol

Audiencia

Estudiantes

Investigadores

Repositorio Or铆gen

REPOSITORIO INSTITUCIONAL DE LA UAEM

Descargas

145

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