Título
Synthesis and characterization of GaN rods prepared by ammono-chemical vapor deposition
Autor
GREGORIO GUADALUPE CARBAJAL ARIZAGA
KARINA VIRIDIANA CHÁVEZ HERNÁNDEZ
NICOLAS CAYETANO CASTRO
MANUEL HERRERA ZALDIVAR
RAFAEL GARCIA GUTIERREZ
OSCAR EDEL CONTRERAS LOPEZ
Nivel de Acceso
Acceso Abierto
Identificador alterno
doi: http://dx.doi.org/10.4236/aces.2012.22034
Resumen o descripción
"GaN rods were deposited by chemical vapor deposition (CVD) onto sapphire (0 0 0 1) and amorphous quartz. The reactive Ga species in vapor the phase was formed with NH4Cl and gallium. The unidirectional growth was catalyzed with gold nanoparticles formed onto the substrate prior to the CVD reaction in order to induce a vapor-liquid-solid (VLS) mechanism. However, this method of synthesis seems to be influenced by other growth mechanisms which formed additional depositions of GaN with different morphology than the rods catalyzed by gold nanoparticles. The moieties of GaN that grew in the absence of gold formed branches in the rods or increased the lateral growth of rods resulting in larger diameters than the size of the gold particle that guided the growth."
Editor
Scientific Research Publishing Inc
Fecha de publicación
abril de 2012
Tipo de publicación
Artículo
Versión de la publicación
Versión publicada
Recurso de información
Formato
application/pdf
Idioma
Inglés
Audiencia
Público en general
Sugerencia de citación
G. Guadalupe Carbajal Arízaga, K. Viridiana Chávez Hernández, N. Cayetano Castro, M. Herrera Zaldivar, R. García Gutiérrez and O. Edel Contreras López, "Synthesis and Characterization of GaN Rods Prepared by Ammono-Chemical Vapor Deposition," Advances in Chemical Engineering and Science, Vol. 2 No. 2, 2012, pp. 292-299. doi: 10.4236/aces.2012.22034.
Repositorio Orígen
Repositorio IPICYT
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