Título
IR sensors based on silicon–germanium–boron alloys deposited by plasma: Fabrication and characterization
Autor
ANDREY KOSAREV
MARIO MORENO MORENO
ALFONSO TORRES JACOME
CARLOS ZUÑIGA ISLAS
Nivel de Acceso
Acceso Abierto
Materias
Resumen o descripción
We report the study of a fabrication process and characterization of a thermal IR sensor based on silicon–germanium–boron alloys (a-SixGeyBz:H) deposited by plasma at low temperature. The sensor is an un-cooled micro-bolometer fabricated with surface micromachining techniques and is fully compatible with the CMOS technology. The temperature dependence of conductivity δ(T) was measured in the sensor in order to calculate the activation energy, Ea, the temperature coefficient of resistance, TCR and the room temperature conductivity, δRT. Current–voltage characteristics, I(U), in darkness and under IR radiation were measured in the device in order to calculate its current responsivity, RI. Spectral noise density was measured and the micro-bolometer detectivity, D* was calculated. The thermal time constant of the micro-bolometer was also measured.
Editor
Elsevier B.V
Fecha de publicación
2008
Tipo de publicación
Artículo
Versión de la publicación
Versión aceptada
Recurso de información
Formato
application/pdf
Idioma
Inglés
Audiencia
Estudiantes
Investigadores
Público en general
Sugerencia de citación
Kosarev, A., et al., (2008). IR sensors based on silicon–germanium–boron alloys deposited by plasma: Fabrication and characterization, Journal of Non-Crystalline Solids (354): 2561–2564
Repositorio Orígen
Repositorio Institucional del INAOE
Descargas
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