Título
Electrical characterization of a-C:H as a dielectric material in metal/insulator/metal structures
Autor
CARLOS ZUÑIGA ISLAS
ANDREY KOSAREV
ALFONSO TORRES JACOME
PEDRO ROSALES QUINTERO
WILFRIDO CALLEJA ARRIAGA
FRANCISCO JAVIER DE LA HIDALGA WADE
OLEKSANDR MALIK
Nivel de Acceso
Acceso Abierto
Materias
Resumen o descripción
The fabrication and electrical characterization of Metal- Insulator-Metal (MIM) structures, using a-C:H films as the insulating material, are presented in this work. These PECVD carbon films show a very low dielectric constant and a very high resistivity. The current conduction mechanisms were analyzed before and after the post deposition annealing in pure argon ambient at 400°C. For as-deposited films, the experimental J-U curves showed that under low biasing regime (|U| < 8 V) the space charge limited current conduction is the main transport mechanism, whereas under higher biasing regime (|U| > 8 V)) the current transport is dominated by the Schottky mechanism. For annealed structures, under low and high biasing the ohmic and Schottky mechanisms were identified as the main processes for the electrical transport. Finally, we found that both parameters, the dielectric constant and resistivity, decrease slightly after the thermal annealing.
Editor
WILEY-VCH Verlag GmbH
&
Co. KGaA, Weinheim
Fecha de publicación
2010
Tipo de publicación
Artículo
Versión de la publicación
Versión aceptada
Recurso de información
Formato
application/pdf
Idioma
Inglés
Audiencia
Estudiantes
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Público en general
Sugerencia de citación
Zúñiga-Islas, C., et al., (2010). Electrical characterization of a-C:H as a dielectric material in metal/insulator/metal structures, Physica Status Solidi C, Vol. 7, (3–4): 808–811
Repositorio Orígen
Repositorio Institucional del INAOE
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