Título
Composition and emission characterization and computational simulation of silicon rich oxide films obtained by LPCVD
Autor
MARIANO ACEVES MIJARES
SERGIO ROMAN LOPEZ
Nivel de Acceso
Acceso Abierto
Materias
Resumen o descripción
Silicon rich oxide (SRO) is a silicon compatible material that could solve the light emission limitation inherent to bulk silicon. However, not many applications are yet reported, since still much research has to be done. In this paper, SRO superficial films were obtained by low pressure chemical vapor deposition. Structural and optical characterization was done by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy (FTIR) corroborating that after annealing, the SiO and the Si₂O phase clearly increases. Emission of SRO in the range between ultra violet and near-infrared is determined by photo, electro and cathode luminescence. Assuming that emission is due to agglomerates of Si–O compounds, computational simulations of cyclic chains of SiO were done to calculate the FTIR spectra, emission and HOMO-LUMO densities. It was found that emission of molecules with less than 10 silicon atoms is not likely to be present in the annealed films. However, for molecules with more than 13 silicon atoms, the emission extends to the visible and near infrared region. The calculated FTIR agrees with the experimental results. Copyright © 2013 John Wiley & Sons, Ltd.
Editor
Surface and Interface Analysis,
Fecha de publicación
10 de marzo de 2013
Tipo de publicación
Artículo
Versión de la publicación
Versión aceptada
Recurso de información
Formato
application/pdf
Idioma
Inglés
Audiencia
Estudiantes
Investigadores
Público en general
Sugerencia de citación
Aceves-Mijares, M., et al., (2013), Composition and emission characterization and computational simulation of silicon rich oxide films obtained by LPCVD, Surface and Interface Analysis, Vol. 46(4):216-223
Repositorio Orígen
Repositorio Institucional del INAOE
Descargas
127