Título

Annealing Effect on the Structural and Optical Properties of SiOx films deposited by HFCVD

Autor

José Alberto Luna López

ALFREDO BENITEZ LARA

GODOFREDO GARCIA SALGADO

JOSE ALVARO DAVID HERNANDEZ DE LA LUZ

MAURICIO PACIO CASTILLO

Alfredo Morales Sánchez

SILVIA ADRIANA PEREZ GARCIA

Nivel de Acceso

Acceso Abierto

Licencia

http://creativecommons.org/about/cc0/

Materias

SiOx Films, HFCVD, Optical Sensor - (SIOX FILMS, HFCVD, OPTICAL SENSOR) INGENIERÍA Y TECNOLOGÍA - (CTI) CIENCIAS TECNOLÓGICAS - (CTI) TECNOLOGÍA DE MATERIALES - (CTI) PROPIEDADES DE LOS MATERIALES - (CTI) PROPIEDADES DE LOS MATERIALES - (CTI)

Resumen o descripción

Non-stoichiometric silicon oxide (SiOx) with embedded Si nanoparticles (Si-nps) shows novel physical characteristic, which permits its use in optoelectronic devices as photodetectors and light emitters. In this work, a detailed analysis of the structural and optical properties of silicon rich oxide films deposited via hot filament chemical vapor deposition is done. SiOx films with different Si content were obtained at different hydrogen flow. FTIR spectra show vibrational bands related to the presence of hydrogen in as-deposited SiOx films. This band is more intense as the hydrogen flow is increased, but disappears after thermal annealing. SiOx films exhibit a broad photoluminiscence (PL) spectra with main peaks at 700 and 750 nm. The PL band at 700 nm is enhanced as the hydrogen content in the SiOx films is increased. XPS spectra show a high Si concentration and a low oxygen concentration in the SiOx films. Transmittance spectra have a shifted to high wavelength after thermal annealing, and optical band gap was from 2.34 to 3.95 eV.

Fecha de publicación

2014

Tipo de publicación

Artículo

Versión de la publicación

Versión aceptada

Recurso de información

http://cimav.repositorioinstitucional.mx/jspui/handle/1004/2363

Formato

application/pdf

Idioma

Inglés

Repositorio Orígen

Fuente de Objetos Científicos Open Access

Descargas

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