Título
Efficient ITO–Si solar cells and power modules fabricated with a low temperature technology: Results and perspectives
Autor
OLEKSANDR MALIK
FRANCISCO JAVIER DE LA HIDALGA WADE
CARLOS ZUÑIGA ISLAS
GUILLERMO RUIZ TABOADA
Nivel de Acceso
Acceso Abierto
Materias
Resumen o descripción
ITO–SiOx–nSi semiconductor–insulator–semiconductor (SIS) structures have been produced with a simple spraying technique. It is shown that the structures obtained in such a way may be considered as an induced p–n diode, in which the polycrystalline tin–doped indium oxide (ITO) layer spray deposited on the preliminary treated silicon surface leads to an inversion p-layer at the interface. Solar cells with an active area of 1–4 cm2 have been fabricated based on ITO–SiOx–nSi structures and studied. Under AM0 illumination conditions, the efficiency is nearly 11%, whereas it exceeds 12% for AM1.5 illumination conditions. The theoretical analysis provided in this work shows a good agreement with experimental results and allows for predicting the efficiency of the cells depending on the silicon electro-physical properties.
Editor
Elsevier B.V.
Fecha de publicación
2008
Tipo de publicación
Artículo
Versión de la publicación
Versión aceptada
Recurso de información
Formato
application/pdf
Idioma
Inglés
Audiencia
Estudiantes
Investigadores
Público en general
Sugerencia de citación
Malik, 0., et al., (2008). Efficient ITO–Si solar cells and power modules fabricated with a low temperature technology: Results and perspectives, Journal of Non-Crystalline Solids (354): 2472–2477
Repositorio Orígen
Repositorio Institucional del INAOE
Descargas
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